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Nr. Titel Autor Jahr
1 Current filament behavior in IGBTs of different voltage classes investigated by measurements and simulations Bhojani, Riteshkumar et al. 2020
2 TRANSISTORBAUELEMENT MIT HOHER STROMFESTIGKEIT Bhojani, Riteshkumar et al. 2020
3 Al modification as indicator of current filaments in IGBTs under repetitive SC operation Mysore, Madhu Lakshman et al. 2019
4 Investigation of repetitive short-circuit operation of 1200 V IGBTs in the IC-VCEphase space Bhojani, Riteshkumar* et al. 2019
5 Transistor device with high current robustness Bhojani, Riteshkumar et al. 2019
6 Local Aluminium Modification as Indicator for Current Filaments in IGBTs far beyond the Safe Operating Area Bhojani, Riteshkumar et al. 2018
7 Observation of Current Filaments in IGBTs with Thermoreflectance Microscopy Bhojani, Riteshkumar et al. 2018
8 Transistor Device with High Current Robustness Bhojani, Riteshkumar et al. 2018
9 Transistorbauelement mit hoher Stromfestigkeit Bhojani, Riteshkumar et al. 2018
10 Unified view on energy and electrical failure of the short-circuit operation of IGBTs Baburske, Roman* et al. 2018
11 A Novel Injection Enhanced Floating Emitter (IEFE) IGBT structure Improving the Ruggedness Against Short-Circuit and Thermal Destruction Bhojani, Riteshkumar et al. 2017
12 Internal processes in power semiconductors at virtual junction temperature measurement Chen, Weinan* et al. 2016
13 Requirements in power cycling for precise lifetime estimation Herold, Christian* et al. 2016
14 Simulation study on collector side filament formation at short-circuit in IGBTs Bhojani, Riteshkumar et al. 2016
15 Gallium arsenide semiconductor parameters extracted from pin diode measurements and simulations Bhojani, Riteshkumar et al. 2015
16 IGBTs WORKING IN THE NDR REGION OF THEIR I-V CHARACTERISTICS Bhojani, Riteshkumar et al. 2015
17 Methods for virtual junction temperature measurement respecting internal semiconductor processes Herold, Christian et al. 2015
18 Experimental Results of Surge Current Measurements for 600 V GaAs pin Diodes Kowalsky, Jens et al. 2014
19 Simulation of 15 A – 600 V GaAs pin Diodes in Comparison with Experimental Results Bhojani, Riteshkumar et al. 2014
20 Dynamic Self-Clamping at Short-Circuit Turn-Off of High-Voltage IGBTs Basler, Thomas et al. 2013
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