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Nr. Titel Autor Jahr
1 Influence of the Gate Switching Instability Induced Threshold Voltage Drift on the Hard Switching Behavior of 1.2 kV SiC MOSFETs Boldyrjew-Mast, Roman* et al. 2025
2 Fatigue Crack Networks in Die-Attach Layers of IGBT Modules Under a Power Cycling Test Liu, Shenyi* et al. 2024
3 Semiconductor Package or a Printed Circuit Board, Both Modified to One or More of Reduce, Inverse or Utilize Magnetic Coupling Caused by the Load Current of a Semiconductor Transistor Liu, Xing et al. 2024
4 Study of the Bias Driven Threshold Voltage Drift of 1.2 kV SiC MOSFETs in Power Cycling and High Temperature Gate Bias Tests Boldyrjew-Mast, Roman* et al. 2024
5 Channel Potential Modification induced Displacement Current during the Trench-Gate IGBT Switching Liu, Xing* et al. 2023
6 IGBT and Free-Wheeling Diode Behavior during the Short Circuit Type III with varied Operation Conditions Liu, Xing* et al. 2023
7 Investigation of the Gate Voltage Overshoot of IGBTs Under Short Circuit Type II Condition Liu, Xing* et al. 2023
8 SiC MOSFET threshold voltage stability during power cycling testing and the impact on the result interpretation Schwabe, Christian* et al. 2023
9 Study of Power Cycling Tests Superimposed with Passive Thermal Cycles on IGBT Modules Otto, Alexander et al. 2023
10 The Impact of the Dead-Time on the Reverse Recovery Behavior of SiC-MOSFET Body Diodes Liu, Xing* et al. 2023
11 Impact of Degradation Mechanisms in Gate Stress Tests on the Hard-Switching Behavior of 1.2 kV SiC Power MOSFETs Boldyrjew-Mast, Roman* et al. 2022
12 Ouvercurrent turn-off robustness and stability of switching behaviour of SiC MOSFET body diodes Palanisamy, Shanmuganathan et al. 2022
13 Short Circuit Type II and III Behavior of 1.2 kV Power SiC-MOSFETs Liu, Xing* et al. 2022
14 Study on the IGBT Short Circuit Type II Behavior Considering the Plasma Effect Liu, Xing* et al. 2022
15 Temperature Distribution of an IGBT Chip during Repetitive SwitchingEvents under Consideration of Front-Side Ageing Bäumler, Christian et al. 2022
16 Fast Short Circuit Type I Detection Method based on VGE-Monitoring Herrmann, Clemens* et al. 2021
17 Influence of Lateral Temperature Gradients on the Failure Modes at Power Cycling Liu, Xing et al. 2021
18 Influence of power cycling ageing on the current and voltage transitions during hard switching of IGBT devices Deng, Erping* et al. 2021
19 Influence of Power Cycling Aging to IGBT Hard Switching Behavior Liu, Xing* et al. 2021
20 Influence of the gate resistance on the short circuit type II & III behavior of IGBT modules and protection Liu, Xing* et al. 2020
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