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Nr.	Titel	Autor	Jahr
1	Impact of the Negative Gate Bias on Short-Circuit Robustness of SiC MOSFETs with Measurements and Simulations	Mysore, Madhu Lakshman* et al.	2026
2	Influencing Factors on the Dynamic VSD Behaviour of Different SiC-MOSFET Technologies used for Temperature Read-Out via VSD(T)-Method during the Power Cycling Test at Different Operating Modes	Heimler, Patrick* et al.	2026
3	On the Reverse Recovery of SiC MOSFET Inverse Diodes	Lutz, Josef* et al.	2026
4	Understanding the Influence of Different Parameters on the Dynamic VSD Behaviour of SiC MOSFETs during Power Cycling Test	Mysore, Madhu Lakshman* et al.	2026
5	Dynamic Characterization and Robustness of SiC MOSFETs Based on SmartSiCTM Engineered Substrates	Alaluss, Mohamed* et al.	2025
6	Influencing Factors on the Dynamic VSD Behaviour of different SiC-MOSFET Technologies used for Temperature Read-Out via VSD(T)-Method during the Power Cycling Test	Heimler, Patrick* et al.	2025
7	Investigation of Overcurrent Turn-Off Robustness of 1200 V SiC MOSFETs	Mysore, Madhu Lakshman* et al.	2025
8	Plasma Behavior of SiC MOSFETs with Engineered Substrates During Reverse Recovery	Alaluss, Mohamed et al.	2025
9	Surge Current Operation of Power GaN HEMTs with p-GaN Gate Under Positive Gate Voltage	Goller, Maximilian* et al.	2025
10	Understanding Snap-Off Phenomenon during Reverse Recovery in SiC MOSFET Body Diodes	Maitra, Abhishek* et al.	2025
11	Investigation of the IGBT’s and Diode’s Ruggedness Under Short-Circuit Type III Conditions Well Beyond the SOA	Mysore, Madhu Lakshman* et al.	2023
12	Study of Different Parameters Influencing the IGBT and Diode Robustness Under Short-Circuit Type III Conditions	Mysore, Madhu Lakshman* et al.	2023
13	Surge-Current capability of the different voltage class IGBTs	Mysore, Madhu Lakshman et al.	2023
14	Investigation of the Short Circuit Type II Safe Operating Area of IGBTs	Mysore, Madhu Lakshman et al.	2022
15	Aluminium modification as indicator for current filaments under repetitive short-circuit in 650 V IGBTs	Mysore, Madhu Lakshman et al.	2021
16	Study of 6.5 kV injection enhanced floating emitter (IEFE) IGBT switching behavior and its improved short-circuit robustness	Mysore, Madhu Lakshman et al.	2021
17	Current filament behavior in IGBTs of different voltage classes investigated by measurements and simulations	Bhojani, Riteshkumar et al.	2020
18	Al modification as indicator of current filaments in IGBTs under repetitive SC operation	Mysore, Madhu Lakshman et al.	2019
19	Investigation of repetitive short-circuit operation of 1200 V IGBTs in the IC-VCEphase space	Bhojani, Riteshkumar* et al.	2019

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Anzahl der Dokumente:	19