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Nr.	Titel	Autor	Jahr
1	Impact of IGBT emitter pad design and front-side aging on switching stability and temperature distribution	Bäumler, Christian* et al.	2025
2	Investigation on the Short-Circuit Behavior of HV-SiC-MOSFETs in Quasi Series Connection	Gesele, Felix et al.	2025
3	Short-Circuit Behavior of Quasi Series Connected SiC-MOSFETs:Measurements and Simulative Validation	Bäumler, Christian* et al.	2025
4	Semiconductor Package or a Printed Circuit Board, Both Modified to One or More of Reduce, Inverse or Utilize Magnetic Coupling Caused by the Load Current of a Semiconductor Transistor	Liu, Xing et al.	2024
5	Understanding Inter-Chip Oscillations in Paralleled SiC MOSFETs	Maitra, Abhishek* et al.	2024
6	Impact of Degradation Mechanisms in Gate Stress Tests on the Hard-Switching Behavior of 1.2 kV SiC Power MOSFETs	Boldyrjew-Mast, Roman* et al.	2022
7	Influence of Magnetic Coupling Effects between Load and GateCommutation Loop on the Short Circuit Behavior	Bäumler, Christian* et al.	2022
8	Temperature Distribution of an IGBT Chip during Repetitive SwitchingEvents under Consideration of Front-Side Ageing	Bäumler, Christian et al.	2022
9	Influence of Power Cycling Aging to IGBT Hard Switching Behavior	Liu, Xing* et al.	2021
10	Reliability aspects of 3D integrated power devices	Bäumler, Christian* et al.	2021
11	Influence of repetitive short circuit events on the power cycling capability of IGBTs in a molded package	Schwabe, Christian* et al.	2020
12	The Influence of the gate driver and common source inductance on the short circuit behavior of IGBT modules and protection	Liu, Xing* et al.	2020
13	Advanced Temperature Estimation in Low Rds,on p-GaN HEMT Devices for Performing Power Cycling Tests	Franke, Jörg* et al.	2019
14	Short Circuit Robustness of an Aged High Power IGBT-Module	Bäumler, Christian* et al.	2019

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