Eintrag in der Universitätsbibliographie der TU Chemnitz
Lutz, Josef ; Rupp, Roland ; Schulze, Hans-Joachim
Wide bandgap semiconductor device and a method for forming a wide bamdgap semiconductor device
Kurzfassung in englisch
A wide band gap semiconductor device includes a first doping region of a first conductivity type and a second doping region of a second conductivity type. A drift portion of the second doping region has a first average net doping concentration lower than 1e17 cm−3. A highly doped portion of the second doping region has a second average net doping concentration higher than 5e18 cm−3. A compensation portion of the second doping region located between the drift and highly doped portions extends from a first area with a net doping concentration higher than 1e16 cm−3 and lower than 1e17 cm−3 to a second area with a net doping concentration higher than 5e18 cm−3. A maximum gradient of the net doping concentration within at least a part of the compensation portion extending from the second area towards the first area for at least 100 nm is lower than 5e22 cm−4.
| Universität: | Technische Universität Chemnitz | |
| Institut: | Professur Leistungselektronik | |
| Dokumentart: | Patent (Offenlegungsschrift, Patentschrift, Gebrauchsmusterschrift) | |
| Veröffentlichungsnummer: | US10700168B2 | |
| Veröffentlichungsdatum | 30.6.2020 | |
| Internationale Patentklassifikation | H01L 29/10 |
