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Nr. Titel Autor Jahr
1 Decoupled Degradation Monitoring of IGBT Modules Based on Temperature-Quantified Indicators Ge, Xinglai et al. 2026
2 Influencing Factors on the Dynamic VSD Behaviour of Different SiC-MOSFET Technologies used for Temperature Read-Out via VSD(T)-Method during the Power Cycling Test at Different Operating Modes Heimler, Patrick* et al. 2026
3 On the Reverse Recovery of SiC MOSFET Inverse Diodes Lutz, Josef* et al. 2026
4 Advanced power cycling test strategies on discrete SiC MOSFETs in different operating modes and the impact on lifetime Hein, Lukas* et al. 2025
5 Factors Influencing the Power Cycling Lifetime of Paralleled IGBT Chips Abuogo, James et al. 2025
6 Influence of Low Temperature Swings and Short Heating Times on the Power Cycling Capability of IGBTs in Discrete Housings Heimler, Patrick* et al. 2025
7 Influence of Switching Loss Magnitude on Lifetime During a Switch-Mode Power Cycling Test of SiC MOSFETs Abuogo, James* et al. 2025
8 Influencing Factors on the Dynamic VSD Behaviour of different SiC-MOSFET Technologies used for Temperature Read-Out via VSD(T)-Method during the Power Cycling Test Heimler, Patrick* et al. 2025
9 Influencing Parameters on the Dynamic On-State Resistance RDS,on in GaN HEMTs and its Recovery Behavior Goller, Maximilian* et al. 2025
10 Investigation of Overcurrent Turn-Off Robustness of 1200 V SiC MOSFETs Mysore, Madhu Lakshman* et al. 2025
11 Investigation on the High Temperature Behaviour of p-GaN HEMTs by Different Temperature Sensitive Electrical Parameters Hein, Lukas* et al. 2025
12 Neue Möglichkeiten zum Kampf gegen Krebs – Aber blamables Gutachterwesen Bittel, Günther et al. 2025
13 Power Cycling Reliability of Paralleled IGBT Chips Heated with Conduction and Switching Losses Abuogo, James* et al. 2025
14 Reliability of discrete SiC MOSFETs under severe temperature-shock and power cycling tests Heimler, Patrick* et al. 2025
15 Reliability Testing of SiC MOSFETs in Different Power Cycling Operating Modes - Focusing on the Challenges of Body Diode Testing Hein, Lukas* et al. 2025
16 Surge Current Operation of Power GaN HEMTs with p-GaN Gate Under Positive Gate Voltage Goller, Maximilian* et al. 2025
17 The impact of mold compound on power cycling capability of SiC MOSFETs in double sided cooled modules Lentzsch, Tobias* et al. 2025
18 Threshold voltage hysteresis investigation of SiC MOSFETs with different structures under various measurement conditions Xie, Dong* et al. 2025
19 Understanding Snap-Off Phenomenon during Reverse Recovery in SiC MOSFET Body Diodes Maitra, Abhishek* et al. 2025
20 Utilization of the IGBT On-Chip Temperature Sensor for Online Temperature Monitoring Considering Continuous Switching Operation Lakshmanan, Narender et al. 2025
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Anzahl der Dokumente: 364

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