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Nr. Titel Autor Jahr
1 Advanced power cycling test strategies on discrete SiC MOSFETs in different operating modes and the impact on lifetime Hein, Lukas* et al. 2025
2 Influence of Switching Loss Magnitude on Lifetime During a Switch-Mode Power Cycling Test of SiC MOSFETs Abuogo, James* et al. 2025
3 Investigation on the High Temperature Behaviour of p-GaN HEMTs by Different Temperature Sensitive Electrical Parameters Hein, Lukas* et al. 2025
4 Power Cycling Reliability of Paralleled IGBT Chips Heated with Conduction and Switching Losses Abuogo, James* et al. 2025
5 The impact of mold compound on power cycling capability of SiC MOSFETs in double sided cooled modules Lentzsch, Tobias* et al. 2025
6 Threshold voltage hysteresis investigation of SiC MOSFETs with different structures under various measurement conditions Xie, Dong* et al. 2025
7 An Improved Approach for an Intermediate Measurement Routine of Dynamic On-State Resistance for GaN Power Devices Goller, Maximilian et al. 2024
8 Determination of the Junction Temperature Under Load Current in GaN Power Devices with Schottky Gate Leakage Current as TSEP Goller, Maximilian et al. 2024
9 Fatigue Crack Networks in Die-Attach Layers of IGBT Modules Under a Power Cycling Test Liu, Shenyi* et al. 2024
10 Impact of the Level of Negative Gate Voltage on the Temperature Measurement during Power Cycling Testing of SiC MOSFETs Heimler, Patrick* et al. 2024
11 Influence of Current Density on Power Cycling Test of Low Voltage MOSFETs in DC Body-Diode Mode and Switching MOSFET-Mode Abuogo, James* et al. 2024
12 Influence of the Gate Voltage during On-Time on the Power Cycling Capability of SiC MOSFETs Heimler, Patrick* et al. 2024
13 Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs Goller, Maximilian* et al. 2024
14 Leistungsbauelemente für Energieeffizienz und Reduzierung der CO2-Emissionen Lutz, Josef et al. 2024
15 Neutron Radiation-Induced Failure Rate of 650 V Lateral GaN Power Devices Fauth, Leon et al. 2024
16 Study of the Bias Driven Threshold Voltage Drift of 1.2 kV SiC MOSFETs in Power Cycling and High Temperature Gate Bias Tests Boldyrjew-Mast, Roman* et al. 2024
17 Surge Current Test of SiC MOSFET with Planar Assembly and Joining Technology Yijun, Ye et al. 2024
18 Thermal Behavior of SiC MOSFET with Planar Packaging Technology Ye, Yijun et al. 2024
19 Adapted Temperature Calibration for Schottky p-GaN Power HEMTs Goller, Maximilian et al. 2023
20 Avalanche Robustness of SiC MOSFETs in Parallel Connections Herrmann, Clemens et al. 2023
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