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Universitätsbibliographie

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Nr. Titel Autor Jahr
1 Nitrogen Engineering in the Ultrathin SiO2 Interface Layer of High-k CMOS Devices: A First-Principles Investigation of Fluorine, Oxygen, and Boron Defect Migration Lazarevic, Florian* et al. 2017
2 Oxygen Vacancies in the Ultrathin SiO_2 Interfacal Layer of High-K/Metal Gate CMOS-Devices Lazarevic, Florian et al. 2016
3 ReaxFF+ A New Reactive Force Field Method for the Accurate Description of Ionic Systems and Its Application to the Hydrolyzation of Aluminosilicates Böhm, Oliver et al. 2016
4 ReaxFF^+ I - a new reactive force field method for the accurate description of ionic systems Böhm, Oliver et al. 2016
5 ReaxFF^+ II - highly efficient parametrization methods for the ReaxFF^+ at the example of the hydrolysation of aluminosilicates Böhm, Oliver et al. 2016
6 Generation of reasonable atomic model structures of amorphous materials for atomic scale simulations Leitsmann, Roman* et al. 2015
7 In-vitro Materials Design - Modern Atomistic Simulation Methods for Engineers Leitsmann, Roman et al. 2015
8 The Degradation Process of High-k SiO2/ HfO2 Gate-Stacks: A Combined Experimental and First Principles Investigation Nadimi, Ebrahim et al. 2014
9 Novel k-restoring scheme for damaged ultra-low-k materials Böhm, Oliver et al. 2013
10 Oxygen Related Defects and the Reliability of Strained High-κ Dielectric Films in Field Effect Transistors: A First Principles Investigation Nadimi, Ebrahim et al. 2013
11 Restoring the k-value in damaged ultra-low k materials Böhm, Oliver et al. 2013
12 Dissolution of CF-polymer films at ultra low-k surfaces using diluted HF Leitsmann, Ronald* et al. 2012
13 Oxygen related defects and the reliability of high-k dielectric films in field effect transistors: an investigation beyond density funcitonal theory Nadimi, Ebrahim et al. 2012
14 Pseudo-3D Multiphysics Simulation of a Hydride Vapor Phase Epitaxy Reactor Hackert-Oschätzchen, Matthias et al. 2012
15 Restoring the k value in carbon depleted ultra low k surfaces by the silylation of hydroxyl groups with N-trimethylsilylimidazole and dimethyladiacetoxysilane Böhm, Oliver et al. 2012
16 Silylation of silicon bonded hydroxyl groups by silazanes and siloxanes containing an acetoxy group. N-trimethylsilylimidazole vs. dimethyldiacetoxysilane Böhm, Oliver et al. 2012
17 First-principles investigation of the leakage current through strained SiO2 gate dielectrics in MOSFETs Nadimi, Ebrahim et al. 2011
18 Interaction of oxygen vacancies and lanthanum in Hf-based high-k dielectrics: an ab initio investigation Nadimi, Ebrahim et al. 2011
19 k-Restoring Processes at Carbon Depleted Ultralow-k Surfaces Böhm, Oliver et al. 2011
20 Single und Multiple Oxygen Vacancies in Ultrathin SiO2 Gate Dielectric and Their Influence on the Leakage Current: An Ab Initio Investigation Nadimi, Ebrahin et al. 2010
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