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Nr.	Titel	Autor	Jahr
1	Theoretical Investigation of High-k Gate Stacks in nano-MOSFETs	Nadimi, Ebrahim	2021
2	First-principles investigation of two-dimensional topological insulators BiX (X=H, F, O)	Fahrvandi, Hamoon et al.	2020
3	Boosting the Sensitivity and Selectivity of a Nanotube-Based NO_2 Gas Sensor: A First-Principles Investigation	Seyed Shahim, Vedaei et al.	2019
4	Quantum Spin Hall Insulating Phase in Graphene/Bismuthene Quantum Well Heterostructure	Fahrvandi, H. et al.	2019
5	Structural, Energetic and Electronic Properties of Lanthanum and Flourine Doped HfO_2/SiO_2 Gate Stack of MOSFETs	Rahimi, Arash et al.	2019
6	The influence of lanthanum doping on the band alignment in Si/SiO2/HfO2 gate stack of nano-MOSFETs: A first principles investigation	Nadimi, Ebrahim* et al.	2017
7	The Degradation Process of High-k SiO₂/ HfO₂ Gate-Stacks: A Combined Experimental and First Principles Investigation	Nadimi, Ebrahim et al.	2014
8	Oxygen Related Defects and the Reliability of Strained High-κ Dielectric Films in Field Effect Transistors: A First Principles Investigation	Nadimi, Ebrahim et al.	2013
9	Oxygen related defects and the reliability of high-k dielectric films in field effect transistors: an investigation beyond density funcitonal theory	Nadimi, Ebrahim et al.	2012
10	First-principles investigation of the leakage current through strained SiO2 gate dielectrics in MOSFETs	Nadimi, Ebrahim et al.	2011
11	Interaction of oxygen vacancies and lanthanum in Hf-based high-k dielectrics: an ab initio investigation	Nadimi, Ebrahim et al.	2011
12	Density functional study of the adsorption of aspirin on the hydroxylated (0 0 1) alpha-quartz surface	Abbasi, Afshin et al.	2009
13	Quantenmechanische und atomistische ab initio Berechnung des Elektronentransport durch ultradünne Gatedielektrika in MOSFETs	Nadimi, Ebrahim (Dipl. -Ing)	2008

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Anzahl der Ergebnisseiten:	1
Anzahl der Dokumente:	13