Eintrag in der Universitätsbibliographie der TU Chemnitz
Lutz, Josef ;
Pertermann, Eric ;
Schulze, Hans-Joachim
INFINEON TECHNOLOGIES AG
Leistungshalbleiterbauelement mit verbesserter Stabilität und Verfahren zur Herstellung
Power Semiconductor Device with Improved Stability and Method for Producing the Same
Kurzfassung in englisch
A power semiconductor device includes a first contact, a second contact, and a semiconductor volume disposed between the first contact and the second contact. The semiconductor volume includes an n-doped field stop layer configured to spatially delimit an electric field that in the semiconductor volume during operation of the power semiconductor device, a heavily p-doped zone and a neighboring heavily n-doped zone, which together form a tunnel diode. The tunnel diode is located in the vicinity of, or adjacent to, or within the field stop layer. The tunnel diode is configured to provide protection against damage to the device due to a rise of an electron flow in an abnormal operating condition, by the fast provision of holes. Further, a method for producing such devices is provided.
| Universität: | Technische Universität Chemnitz | |
| Institut: | Professur Leistungselektronik | |
| Dokumentart: | Patent (Offenlegungsschrift, Patentschrift, Gebrauchsmusterschrift) | |
| Veröffentlichungsnummer: | DE102014118664A1 | |
| Veröffentlichungsdatum | 16.06.2016 | |
| Internationale Patentklassifikation | H01L 29/739 | |
| Nachanmeldungen in anderen Staaten | CN000105702719A |
