Eintrag in der Universitätsbibliographie der TU Chemnitz
Leendertz, Caspar ;
Basler, Thomas ;
Ellinghaus, Paul ;
Elpelt, Rudolf ;
Hell, Michael ;
Konrath, Jens Peter ;
Niu, Shiqin ;
Peters, Dethard ;
Schraml, Konrad ;
Zippelius, Bernd Leonhard
Infineon Technologies AG
Silicon carbide device with a stripe-shaped trench gate structure
Kurzfassung in englisch
A silicon carbide device includes: a transistor cell having a stripe-shaped trench gate structure extending from a first surface into a silicon carbide body, the gate structure having a gate length along a lateral first direction, a bottom surface and a first gate sidewall of the gate structure being connected via a first bottom edge of the gate structure; at least one source region of a first conductivity type in contact with the first gate sidewall; and a shielding region of a second conductivity type in contact with the first bottom edge of the gate structure across at least 20% of the gate length. No source regions of the first conductivity type are in contact with a second gate sidewall of the gate structure.
| Universität: | Technische Universität Chemnitz | |
| Institut: | Professur Leistungselektronik | |
| Dokumentart: | Patent (Offenlegungsschrift, Patentschrift, Gebrauchsmusterschrift) | |
| Veröffentlichungsnummer: | US12266694B2 | |
| Veröffentlichungsdatum | 1.4.2025 |
