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Nr. Titel Autor Jahr
1 Decoupled Degradation Monitoring of IGBT Modules Based on Temperature-Quantified Indicators Ge, Xinglai et al. 2026
2 Impact of Package Degradation on Short-Circuit Robustness and Temperature Stability during Application-Close Repetitive Switching of IGBTs Bäumler, Christian 2026
3 A Comprehensive Study on the Gate Switching Instability of 1.2 kV SiC MOSFETs Considering Application Relevant Conditions Thiele, Sven et al. 2025
4 A Novel Test Method for Bipolar Degradation under Short Dead Times Herrmann, Clemens et al. 2025
5 Advanced power cycling test strategies on discrete SiC MOSFETs in different operating modes and the impact on lifetime Hein, Lukas* et al. 2025
6 Analysis of Aged Power Modules considering the Loss Calculation of a Heavy-Duty Fuel Cell Truck Gürlek, Yavuz* et al. 2025
7 Analysis of Aged SiC MOSFET and Si IGBT Power Modules considering the Loss Calculation of a Heavy-Duty Fuel Cell Truck Gürlek, Yavuz* et al. 2025
8 Dead Time Dependency of Bipolar Degradation in SiC MOSFETs Herrmann, Clemens et al. 2025
9 Dynamic Characterization and Robustness of SiC MOSFETs Based on SmartSiCTM Engineered Substrates Alaluss, Mohamed* et al. 2025
10 External and Internal Factors Influencing the Short Circuit of IGBTs and SiC-MOSFETs Liu, Xing 2025
11 Factors Influencing the Power Cycling Lifetime of Paralleled IGBT Chips Abuogo, James et al. 2025
12 Impact of IGBT emitter pad design and front-side aging on switching stability and temperature distribution Bäumler, Christian* et al. 2025
13 Influence of Low Temperature Swings and Short Heating Times on the Power Cycling Capability of IGBTs in Discrete Housings Heimler, Patrick* et al. 2025
14 Influence of Switching Loss Magnitude on Lifetime During a Switch-Mode Power Cycling Test of SiC MOSFETs Abuogo, James* et al. 2025
15 Influence of the Gate Switching Instability Induced Threshold Voltage Drift on the Hard Switching Behavior of 1.2 kV SiC MOSFETs Boldyrjew-Mast, Roman* et al. 2025
16 Influencing Factors on the Dynamic VSD Behaviour of different SiC-MOSFET Technologies used for Temperature Read-Out via VSD(T)-Method during the Power Cycling Test Heimler, Patrick* et al. 2025
17 Influencing Parameters on the Dynamic On-State Resistance RDS,on in GaN HEMTs and its Recovery Behavior Goller, Maximilian* et al. 2025
18 Investigation of Overcurrent Turn-Off Robustness of 1200 V SiC MOSFETs Mysore, Madhu Lakshman* et al. 2025
19 Investigation on the High Temperature Behaviour of p-GaN HEMTs by Different Temperature Sensitive Electrical Parameters Hein, Lukas* et al. 2025
20 Investigation on the Short-Circuit Behavior of HV-SiC-MOSFETs in Quasi Series Connection Gesele, Felix et al. 2025
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