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Nr. Titel Autor Jahr
1 Impact of IGBT emitter pad design and front-side aging on switching stability and temperature distribution Bäumler, Christian* et al. 2025
2 Influence of Switching Loss Magnitude on Lifetime During a Switch-Mode Power Cycling Test of SiC MOSFETs Abuogo, James* et al. 2025
3 Investigation on the Short-Circuit Behavior of HV-SiC-MOSFETs in Quasi Series Connection Gesele, Felix et al. 2025
4 Power Cycling Reliability of Paralleled IGBT Chips Heated with Conduction and Switching Losses Abuogo, James* et al. 2025
5 Short-Circuit Behavior of Quasi Series Connected SiC-MOSFETs:Measurements and Simulative Validation Bäumler, Christian* et al. 2025
6 Threshold voltage hysteresis investigation of SiC MOSFETs with different structures under various measurement conditions Xie, Dong* et al. 2025
7 3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Class Alaluss, Mohamed* et al. 2024
8 Active Short-Circuit Investigation of SiC MOSFETs Alaluss, Mohamed* et al. 2024
9 An Accelerated Dynamic Gate Switching Stress Test Concept for SiC MOSFETs at High Drain Drain-Source Voltage (HV-GSS) Herrmann, Clemens* et al. 2024
10 An Improved Approach for an Intermediate Measurement Routine of Dynamic On-State Resistance for GaN Power Devices Goller, Maximilian et al. 2024
11 Current Ripple Reduction Approaches in a Heavy-Duty Fuel Cell Truck Gürlek, Yavuz et al. 2024
12 Current Ripple Reduction by combination of Si IGBT and SiC MOSFETs in Heavy-Duty Fuel Cell Trucks Gürlek, Yavuz et al. 2024
13 Determination of the Junction Temperature Under Load Current in GaN Power Devices with Schottky Gate Leakage Current as TSEP Goller, Maximilian et al. 2024
14 Digital Twin-Based Lifetime Estimation of SiC Power Modules Mathew, Anu* et al. 2024
15 Energy Balancing in Paralleled SiC MOSFETs During an Avalanche Event Herrmann, Clemens* et al. 2024
16 Fault Diagnosis for the Cascaded H-Bridge Multilevel Converter Considering Fault Coupling Between Switches and Sensors Xie, Dong* et al. 2024
17 Gate Oxide Reliability of Current Generation 1.2 kV SiC MOSFETs under Step-Wise Increased Gate Voltage Boldyrjew-Mast, Roman* et al. 2024
18 Gate Switching Instability of SiC MOSFETs under Simultaneously High Drain-Source Voltage and High Frequency Acceleration Thiele, Sven* et al. 2024
19 Impact of the Level of Negative Gate Voltage on the Temperature Measurement during Power Cycling Testing of SiC MOSFETs Heimler, Patrick* et al. 2024
20 Influence of Current Density on Power Cycling Test of Low Voltage MOSFETs in DC Body-Diode Mode and Switching MOSFET-Mode Abuogo, James* et al. 2024
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