Ergebnis der Datenbankabfrage
| Nr. | Titel | Autor | Jahr |
|---|---|---|---|
| 1 | Silicon carbide device with a stripe-shaped trench gate structure | Leendertz, Caspar et al. | 2025 |
| 2 | Failure Structure in a Semiconductor Device | Basler, Thomas et al. | 2021 |
| 3 | SILIZIUMCARBID-VORRICHTUNG MIT GRABEN-GATE | Leendertz, Caspar et al. | 2020 |
| 4 | Siliziumkarbid-Bauelement und Verfahren zum Bilden eines Siliziumkarbid-Bauelements | Fuergut, Edward et al. | 2020 |
| 5 | Investigation of threshold voltage stability of SiC MOSFETs | Peters, Dethard* et al. | 2018 |
| 6 | Practical Aspects and Body Diode Robustness of a 1200 V SiC Trench MOSFET | Basler, Thomas* et al. | 2018 |
| 7 | A SiC Trench MOSFET concept offering improved channel mobility and high reliability | Siemieniec, Ralf* et al. | 2017 |
| 8 | Performance and ruggedness of 1200V SiC — Trench — MOSFET | Peters, Dethard* et al. | 2017 |
| 9 | The New CoolSiC(TM)Trench MOSFET Technology for Low Gate Oxide Stress and High Performance | Peters, Dethard* et al. | 2017 |
| Anzahl der Ergebnisseiten: | 1 |
| Anzahl der Dokumente: | 9 |
