Ergebnis der Datenbankabfrage
| Nr. | Titel | Autor | Jahr |
|---|---|---|---|
| 1 | Influence of the Gate Switching Instability Induced Threshold Voltage Drift on the Hard Switching Behavior of 1.2 kV SiC MOSFETs | Boldyrjew-Mast, Roman* et al. | 2025 |
| 2 | IGBT and Free-Wheeling Diode Behavior during the Short Circuit Type III with varied Operation Conditions | Liu, Xing* et al. | 2023 |
| 3 | The Impact of the Dead-Time on the Reverse Recovery Behavior of SiC-MOSFET Body Diodes | Liu, Xing* et al. | 2023 |
| 4 | Short Circuit Type II and III Behavior of 1.2 kV Power SiC-MOSFETs | Liu, Xing* et al. | 2022 |
| 5 | Wearable Smart Band for American Sign Language Recognition With Polymer Carbon Nanocomposite-Based Pressure Sensors | Ramalingame, Rajarajan et al. | 2021 |
| Anzahl der Ergebnisseiten: | 1 |
| Anzahl der Dokumente: | 5 |
