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Nr. Titel Autor Jahr
1 Influence of the Gate Switching Instability Induced Threshold Voltage Drift on the Hard Switching Behavior of 1.2 kV SiC MOSFETs Boldyrjew-Mast, Roman* et al. 2025
2 3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Class Alaluss, Mohamed* et al. 2024
3 An Accelerated Dynamic Gate Switching Stress Test Concept for SiC MOSFETs at High Drain Drain-Source Voltage (HV-GSS) Herrmann, Clemens* et al. 2024
4 Energy Balancing in Paralleled SiC MOSFETs During an Avalanche Event Herrmann, Clemens* et al. 2024
5 Gate Switching Instability of SiC MOSFETs under Simultaneously High Drain-Source Voltage and High Frequency Acceleration Thiele, Sven* et al. 2024
6 Avalanche Robustness of SiC MOSFETs in Parallel Connections Herrmann, Clemens et al. 2023
7 The Impact of the Dead-Time on the Reverse Recovery Behavior of SiC-MOSFET Body Diodes Liu, Xing* et al. 2023
8 Ouvercurrent turn-off robustness and stability of switching behaviour of SiC MOSFET body diodes Palanisamy, Shanmuganathan et al. 2022
9 Fast Short Circuit Type I Detection Method based on VGE-Monitoring Herrmann, Clemens* et al. 2021
10 Influence of Lateral Temperature Gradients on the Failure Modes at Power Cycling Liu, Xing et al. 2021
11 Influence of the gate resistance on the short circuit type II & III behavior of IGBT modules and protection Liu, Xing* et al. 2020
12 The Influence of the gate driver and common source inductance on the short circuit behavior of IGBT modules and protection Liu, Xing* et al. 2020
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