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Nr.	Titel	Autor	Jahr
1	Influence of Interface Traps and Cell Design on Dynamic VSD Behaviour in Double-Trench SiC MOSFETs	Mysore, Madhu Lakshman et al.	2026
2	Understanding the Influence of Different Parameters on the Dynamic VSD Behaviour of SiC MOSFETs during Power Cycling Test	Mysore, Madhu Lakshman* et al.	2026
3	Influencing Parameters on the Dynamic On-State Resistance RDS,on in GaN HEMTs and its Recovery Behavior	Goller, Maximilian* et al.	2025
4	Investigation of Gate Driving Condition on p-GaN HEMTs under Single Event Short Circuit Type I	Li, Gengqi* et al.	2025
5	Investigation on the High Temperature Behaviour of p-GaN HEMTs by Different Temperature Sensitive Electrical Parameters	Hein, Lukas* et al.	2025
6	Surge Current Operation of Power GaN HEMTs with p-GaN Gate Under Positive Gate Voltage	Goller, Maximilian* et al.	2025
7	An Improved Approach for an Intermediate Measurement Routine of Dynamic On-State Resistance for GaN Power Devices	Goller, Maximilian et al.	2024
8	Determination of the Junction Temperature Under Load Current in GaN Power Devices with Schottky Gate Leakage Current as TSEP	Goller, Maximilian et al.	2024
9	Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs	Goller, Maximilian* et al.	2024
10	Investigation of thermo-mechanical fatigue in lateral GaN power transistors with variable switching and conduction losses	Hein, Lukas et al.	2024
11	Neutron Radiation-Induced Failure Rate of 650 V Lateral GaN Power Devices	Fauth, Leon et al.	2024
12	Adapted Temperature Calibration for Schottky p-GaN Power HEMTs	Goller, Maximilian et al.	2023
13	Application-close Study of a SiC JFET Cascode Switching Characteristic under dv/dt-Limitations	Dukar, Josefine et al.	2023
14	Reliability Investigations on 650 V Schottky p-GaN Power Gallium Nitride HEMTs	Goller, Maximilian et al.	2023
15	Precise Determination of Dynamic RDSon in AlGaN/GaN Power HEMTs under Soft Switching Condition	Goller, Maximilian* et al.	2022
16	Temperature Distribution of an IGBT Chip during Repetitive SwitchingEvents under Consideration of Front-Side Ageing	Bäumler, Christian et al.	2022
17	Power Cycling Results of Discrete Gallium Nitride Gate Injection Transistors	Goller, Maximilian* et al.	2021
18	Investigation of the current collapse behaviour in GaN power HEMTs with highly adjustable pulse and measurement concept	Goller, Maximilian* et al.	2020
19	Power Cycling Test Bench Topology with Alternating Load Current and Online Temperature Measurement for Thyristor Devices	Herold, Christian* et al.	2020

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Anzahl der Dokumente:	19