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Nr.	Titel	Autor	Jahr
1	Investigation on the High Temperature Behaviour of p-GaN HEMTs by Different Temperature Sensitive Electrical Parameters	Hein, Lukas* et al.	2025
2	An Improved Approach for an Intermediate Measurement Routine of Dynamic On-State Resistance for GaN Power Devices	Goller, Maximilian et al.	2024
3	Determination of the Junction Temperature Under Load Current in GaN Power Devices with Schottky Gate Leakage Current as TSEP	Goller, Maximilian et al.	2024
4	Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs	Goller, Maximilian* et al.	2024
5	Neutron Radiation-Induced Failure Rate of 650 V Lateral GaN Power Devices	Fauth, Leon et al.	2024
6	Adapted Temperature Calibration for Schottky p-GaN Power HEMTs	Goller, Maximilian et al.	2023
7	Application-close Study of a SiC JFET Cascode Switching Characteristic under dv/dt-Limitations	Dukar, Josefine et al.	2023
8	Reliability Investigations on 650 V Schottky p-GaN Power Gallium Nitride HEMTs	Goller, Maximilian et al.	2023
9	Precise Determination of Dynamic RDSon in AlGaN/GaN Power HEMTs under Soft Switching Condition	Goller, Maximilian* et al.	2022
10	Temperature Distribution of an IGBT Chip during Repetitive SwitchingEvents under Consideration of Front-Side Ageing	Bäumler, Christian et al.	2022
11	Power Cycling Results of Discrete Gallium Nitride Gate Injection Transistors	Goller, Maximilian* et al.	2021
12	Investigation of the current collapse behaviour in GaN power HEMTs with highly adjustable pulse and measurement concept	Goller, Maximilian* et al.	2020
13	Power Cycling Test Bench Topology with Alternating Load Current and Online Temperature Measurement for Thyristor Devices	Herold, Christian* et al.	2020

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