Ergebnis der Datenbankabfrage
Nr. | Titel | Autor | Jahr |
---|---|---|---|
1 | High-Voltage IGBT turn-off at transition from overcurrent to desaturation | Chen, Weinan* et al. | 2021 |
2 | Influence of Internal Semiconductor Processes on Errors at Measurement of Thermal Resistance | Chen, Weinan* et al. | 2021 |
3 | Temperature Influence on the Accuracy of the Transient Dual Interface Method for the Junction-to-case Thermal Resistance Measurement | Deng, Erping* et al. | 2020 |
4 | Difference in device temperature determination using pn-junction forward voltage and gate threshold voltage | Zeng, Guang et al. | 2018 |
5 | Internal processes in power semiconductors at virtual junction temperature measurement | Chen, Weinan* et al. | 2016 |
Anzahl der Ergebnisseiten: | 1 |
Anzahl der Dokumente: | 5 |