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Eintrag in der Universitätsbibliographie der TU Chemnitz


Jeschke, Janine ; Lang, Heinrich ; Georgi, Colin

Ruthenium precursors for the deposition of ruthenium, production and use


Kurzfassung in englisch

The present invention relates to novel ruthenium precursors for the deposition of ruthenium, their preparation and a method for the deposition of thin ruthenium or ruthenium-containing layers by means of vapor deposition.
The ruthenium precursors according to the invention for the separation of ruthenium, contain compounds of general formula Ru (CO) 2 L 2 (O 2 CR 1) (O 2 CR 2) wherein ligand L are identical or different two-electron pair donors are selected from phosphine, phosphite, arsine and / or amine of the general formula E (R 3 R 4 R 5) with E = phosphorus, arsenic or nitrogen, and R 3, R 4 and R 5 are identical or different, selected from alkyl, aryl radical and / or OR 6 R 6 = alkyl and / or aryl radical, O 2 CR 1 and O 2 are CR 2 identical or different carboxylates and wherein the remaining R 1 and R 2 are independently an optionally substituted, branched, unbranched or cyclic alkyl or aryl radical or H and wherein CO carbonyls are.

Universität: Technische Universität Chemnitz
Institut 1: Professur Anorganische Chemie
Institut 2: Zentrum für Mikrotechnologien (ZfM)
Dokumentart: Patent (Offenlegungsschrift, Patentschrift, Gebrauchsmusterschrift)
Veröffentlichungsnummer: DE102014205342A1
Veröffentlichungsdatum 24.09.2015
Internationale Patentklassifikation C07F 15/00

 

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