Eintrag in der Universitätsbibliographie der TU Chemnitz
Jeschke, Janine ; Lang, Heinrich ; Georgi, Colin
Ruthenium precursors for the deposition of ruthenium, production and use
Kurzfassung in englisch
The present invention relates to novel ruthenium precursors for the deposition of ruthenium, their preparation and a method for the deposition of thin ruthenium or ruthenium-containing layers by means of vapor deposition.The ruthenium precursors according to the invention for the separation of ruthenium, contain compounds of general formula Ru (CO) 2 L 2 (O 2 CR 1) (O 2 CR 2) wherein ligand L are identical or different two-electron pair donors are selected from phosphine, phosphite, arsine and / or amine of the general formula E (R 3 R 4 R 5) with E = phosphorus, arsenic or nitrogen, and R 3, R 4 and R 5 are identical or different, selected from alkyl, aryl radical and / or OR 6 R 6 = alkyl and / or aryl radical, O 2 CR 1 and O 2 are CR 2 identical or different carboxylates and wherein the remaining R 1 and R 2 are independently an optionally substituted, branched, unbranched or cyclic alkyl or aryl radical or H and wherein CO carbonyls are.
| Universität: | Technische Universität Chemnitz | |
| Institut 1: | Professur Anorganische Chemie | |
| Institut 2: | Zentrum für Mikrotechnologien (ZfM) | |
| Dokumentart: | Patent (Offenlegungsschrift, Patentschrift, Gebrauchsmusterschrift) | |
| Veröffentlichungsnummer: | DE102014205342A1 | |
| Veröffentlichungsdatum | 24.09.2015 | |
| Internationale Patentklassifikation | C07F 15/00 |
