Ergebnis der Datenbankabfrage
Nr. | Titel | Autor | Jahr |
---|---|---|---|
1 | Formation of an Sb-N Compound During Nitridation of InSb(001) Substrates Using Atomic Nitrogen | Haworth, L. et al. | 1998 |
2 | Analysis of Molecular Beam Epitaxial Growth of InAs on GaAs(100) by Reflection Anisotropy Spectroscopy | Scholz, S.M. et al. | 1992 |
3 | Far Infrared Measurements of the Mobility and Carrier Concentration in Lightly Doped GaAs on Si(100) | Morley, S. et al. | 1992 |
4 | Vibrational Properties of Arsenic on Si(111) | Wilhelm, H. et al. | 1991 |
5 | FIR Studies of Moderately Doped MBE Grown GaAs on Si(100) | Morley, S. et al. | 1990 |
6 | Quality of Molecular-beam-epitaxy-grown GaAs on Si(100) Studied by Ellipsometry | Rossow, U. et al. | 1990 |
Anzahl der Ergebnisseiten: | 1 |
Anzahl der Dokumente: | 6 |