Ergebnis der Datenbankabfrage

Nr.	Titel	Autor	Jahr
1	Lateral diffusion of photogenerated carriers in InGaN/GaN heterostructures observed by PL measurements	Vierheilig, C.* et al.	2007
2	Temperature- and excitation density dependency of photoluminescence spectra in InGaN/GaN-heterostructures	Vierheilig, C.* et al.	2007
3	Analysis of temperature-dependent optical gain in GaN-InGaN quantum-well structures	Witzigmann, B. et al.	2006
4	Influence of an in situ-deposited intermediate layer inside GaN and AlGaN layers on SiC substrates	Engl, K.* et al.	2006
5	Long range strain and electrical potential induced by single edge dislocations in GaN	Gmeinwieser, N.* et al.	2006
6	Microscopic analysis of optical gain in InGaN / GaN quantum wells	Witzigmann, B.* et al.	2006
7	Local strain and potential distribution induced by single dislocations in GaN	Gmeinwieser, N.* et al.	2005
8	Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates	Gmeinwieser, N.* et al.	2004
9	Excitonic signature in gain and carrier induced change of refractive index spectra of (In,Al)GaN quantum well lasers	Schwarz, Ulrich T.* et al.	2004
10	Gradual facet degradation of (Al,In)GaN quantum well lasers	Kümmler, V.* et al.	2004
11	Gain spectra and current-induced change of refractice index in (In/Al)GaN diode lasers	Schwarz, Ulrich T.* et al.	2003
12	Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers	Schwarz, Ulrich T.* et al.	2003