Ergebnis der Datenbankabfrage
Nr. | Titel | Autor | Jahr |
---|---|---|---|
1 | Comparison of different device concepts to increase the operating voltage of a trench isolated SOI technology to above 900V | Lerner, Ralf* et al. | 2015 |
2 | Using SOI capabilities to increase breakdown voltages from < 600 V to > 900 V | Lerner, Ralf et al. | 2014 |
3 | Optimization of Trench Manufacturing for a new High-Voltage Semiconductor Technology | Fritzsch, Matthias et al. | 2010 |
4 | Single Trench Isolation for a 650 V SOI Technology with Low Mechanical Stress | Kittler, Gabriel et al. | 2010 |
5 | Time dependent isolation capability of high voltage deep trench isolation | Lerner, Ralf et al. | 2008 |
6 | Modeling the Leakage Current of Dielectric Isolation Structures in a High-Voltage Semiconductor Technology | Lange, André et al. | 2007 |
Anzahl der Ergebnisseiten: | 1 |
Anzahl der Dokumente: | 6 |