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Ergebnis der Datenbankabfrage

Nr.	Titel	Autor	Jahr
1	Analysis of perturbations in the lateral far-field of blue InGaN laser diodes	Kopp, Fabian* et al.	2013
2	Lateral and longitudinal mode pattern of broad ridge 405nm (Al, In)GaN laser diodes	Braun, H.* et al.	2008
3	True-blue InGaN laser for pico size projectors	Strauss, U. et al.	2008
4	Experimental and theoretical study of substrate modes in (Al,In)GaN laser diodes	Braun, H.* et al.	2007
5	Measurement of the internal quantum efficiency of InGaN quantum wells	Laubsch, A. et al.	2007
6	Analysis of temperature-dependent optical gain in GaN-InGaN quantum-well structures	Witzigmann, B. et al.	2006
7	Influence of an in situ-deposited intermediate layer inside GaN and AlGaN layers on SiC substrates	Engl, K.* et al.	2006
8	Long range strain and electrical potential induced by single edge dislocations in GaN	Gmeinwieser, N.* et al.	2006
9	Microscopic analysis of optical gain in InGaN / GaN quantum wells	Witzigmann, B.* et al.	2006
10	Time-resolved scanning near-field microscopy of InGaN laser diode dynamics	Schwarz, Ulrich T. et al.	2006
11	Local strain and potential distribution induced by single dislocations in GaN	Gmeinwieser, N.* et al.	2005
12	Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates	Gmeinwieser, N.* et al.	2004
13	Excitonic signature in gain and carrier induced change of refractive index spectra of (In,Al)GaN quantum well lasers	Schwarz, Ulrich T.* et al.	2004
14	Gradual facet degradation of (Al,In)GaN quantum well lasers	Kümmler, V.* et al.	2004
15	Gain spectra and current-induced change of refractice index in (In/Al)GaN diode lasers	Schwarz, Ulrich T.* et al.	2003
16	Laser Diode Facet Degradation Study	Schwarz, Ulrich T. et al.	2003
17	Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers	Schwarz, Ulrich T.* et al.	2003

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Anzahl der Ergebnisseiten:	1
Anzahl der Dokumente:	17