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Eintrag in der Universitätsbibliographie der TU Chemnitz

Volltext zugänglich unter
URN: urn:nbn:de:bsz:ch1-qucosa2-711491


Rahaman, Mahfujur
Zahn, Dietrich R. T. (Prof. Dr. Dr. h. c.) ; Tegenkamp, Christoph (Prof. Dr.) ; Gemming, Sibylle (Prof. Dr.) (Gutachter)

Micro and Nano Raman Investigation of Two-Dimensional Semiconductors towards Device Application


Kurzfassung in englisch

Recent advances in nanoscale characterization and device fabrications have opened up opportunities for layered semiconductors in nanoelectronics and optoelectronics. Due to strong confinement in monolayer thickness, physical properties of this materials are greatly influenced by parameters such as strain, defects, and doping at the nanoscale. Therefore, understanding the effect of this parameters on layered semiconductors is the prerequisite for any device application. In this doctoral thesis, impact of such parameters on the optical properties of layered semiconductors are studied in nanoscale. MoS2, the most famous transition metal dechalcogenide (TMDC) (n-type semiconductor), and p-type GaSe, a member of metal monochalcogenide (MMC) are investigated in this work. Finally, in outlook, a device made of p-type few layer GaSe and n-type 1L-MoS2 is discussed.

Universität: Technische Universität Chemnitz
Institut: Professur Halbleiterphysik
Fakultät: Fakultät für Naturwissenschaften
Dokumentart: Dissertation
Betreuer: Zahn, Dietrich R. T. (Prof. Dr. Dr. h. c.)
URL/URN: https://nbn-resolving.org/urn:nbn:de:bsz:ch1-qucosa2-711491
SWD-Schlagwörter: Physik , Optik , Nanometerbereich , Halbleiter , Nanoelektronik , Optoelektronik , Nanooptik
Freie Schlagwörter (Englisch): 2D materials , MoS2 , GaSe , TERS , plasmonics , environmental stability , strain , doping , nano-optics
DDC-Sachgruppe: Physik
Sprache: englisch
Tag der mündlichen Prüfung 18.07.2019

 

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