Eintrag in der Universitätsbibliographie der TU Chemnitz
Volltext zugänglich unter
URN: urn:nbn:de:bsz:ch1-qucosa-164319
Daniel, Marcus
Albrecht, Manfred (Prof. Dr.) ; Seyller, Thomas (Prof. Dr.) (Gutachter)
Structural and Thermoelectric Properties of Binary and Ternary Skutterudite Thin Films
Kurzfassung in englisch
Increasing interest in an effciency enhancement of existing energy sources led to an extended research in the field of thermoelectrics. Especially skutterudites with their high power factor (electric conductivity times Seebeck coefficient squared) are suitable thermoelectric materials. However, a further improvement of their thermoelectric properties is necessary. The relatively high thermal conductivity can be decreased by introducing loosely bound guest ions, whereas atom substitution or nanostructuring (as thin films) could yield an increased power factor.The present work proves the feasibility to deposit single phase skutterudite thin films by MBE technique. In this regard CoSby and FeSby film series were deposited with three different methods: i) codeposition at elevated temperatures, ii) codeposition at room temperature followed by post-annealing, and iii) modulated elemental reactant method. The structural and thermoelectric properties of these films were investigated by taking the thermal stability of the film and the substrate properties into account. Compared to the stoichiometric Sb content of skutterudites of 75 at.%, a small excess of Sb is necessary for achieving single phase skutterudite films. It was found, that the deposited single phase CoSb3 films reveal bipolar conduction (and therefore a low Seebeck coefficient), whereas FeSb3 films show p-type conduction and very promising power factors at room temperature.
The need of substrates with a low thermal conductivity and a suitable thermal expansion coefficient is also demonstrated. A high thermal conductivity influences the measurements of the Seebeck coefficient and the obtained values will be underestimated by thermal shortening of the film by the substrate. If the thermal expansion coefficient of film and substrate differ strongly from each other, crack formation at the film surface was observed.
Furthermore, the realization of controlled doping by substitution as well as the incorporation of guest ions was successfully shown. Hence, this work is a good starting point for designing skutterudite based thin film structures. Two successful examples for such structures are given: i) a thickness series, where a strong decrease of the resistivity was observed for films with a thickness lower than 10nm, and ii) a FexCo1-xSb3 gradient film, for which the gradient was maintained even at an annealing temperature of 400°C.
| Universität: | Technische Universität Chemnitz | |
| Institut: | Institut für Physik Allgemein | |
| Fakultät: | Fakultät für Naturwissenschaften | |
| Dokumentart: | Dissertation | |
| Betreuer: | Albrecht, Manfred (Prof. Dr.) | |
| URL/URN: | http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-164319 | |
| SWD-Schlagwörter: | Skutterudite , Halbleiter , Antimon , Molekularstrahlepitaxie | |
| Freie Schlagwörter (Deutsch): | Skutterudite , Thermoelektrik , Dünne Schichten , Molekularstrahlepitaxie (MBE) , Seebeck Koeffizient , ZT , CoSb3 , FeSb3 , Gradientenschichten , van der Pauw , Thermischer Ausdehnungskoeffizient , Antimon , Halbleiter | |
| Freie Schlagwörter (Englisch): | skutterudites , thermoelectric , thin films , molecular beam epitaxy (MBE) , Seebeck coefficient , ZT , CoSb3 , FeSb3 , gradient films , van der Pauw , thermal expansion coefficient , antimony , modulated elemental reactant method , semiconductor | |
| DDC-Sachgruppe: | Physik, Wärme, Elektrizität, Elektronik, Moderne Physik | |
| Tag der mündlichen Prüfung | 02.04.2015 |
