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Universitätsbibliographie

Universitätsbibliographie | Universitätsbibliothek | TU Chemnitz

Universitätsbibliothek

Eintrag in der Universitätsbibliographie der TU Chemnitz

Lentzsch, Tobias^* ; Schwabe, C. ; Lutz, J. ; Basler, T.

Calibration methods and power cycling of double-side cooled SiC MOSFET power modules

Universität:		Technische Universität Chemnitz
Institut:		Professur Leistungselektronik
Dokumentart:		Konferenzbeitrag, referiert
ISBN/ISSN:		Print ISSN: 0026-2714 ; Online ISSN: 1872-941X
DOI:		doi:10.1016/j.microrel.2023.115077
URL/URN:		https://pdf.sciencedirectassets.com/271470/1-s2.0-S0026271423X00092/1-s2.0-S0026271423001774/main.pdf?X-Amz-Security-Token=IQoJb3JpZ2luX2VjEMP%2F%2F%2F%2F%2F%2F%2F%2F%2F%2FwEaCXVzLWVhc3QtMSJIMEYCIQCgFPqUokzrB41p9rZQEmWBWAcDIU1Cy9Wx4brh0quqQAIhAKdfkMcbjw1XTL7cLTlBNePknzy3S1kze1Y9faV2MosAKrwFCLz%2F%2F%2F%2F%2F%2F%2F%2F%2F%2FwEQBRoMMDU5MDAzNTQ2ODY1Igw2jINYP4CYJf1ptKoqkAVWjE01%2F2ZvnQrkM1cLydJq9Rbtsh3NlhqutaMGa6M4a475ebfbtSuwlLW%2B8nirAjb%2FCd3qvL5nitaL9jSh4QQXHPXwuMTX%2BbUGd0KMFAGjX5nYtaJdxWizkn5mEtXEyeo8I4pvnD4MQ2k85c5ax5tYe0u%2B3VfmHU2VJSbNsDt%2FEt5hgdllKKn%2BAOG1THbo8qDQgGMOsgQG3O%2F8vLi4pX8GxN4msziffQN%2BGWkZMXh2ghd9bGwzifOEHtdnU8duWYLH1A7hs1wlU5uffeEKBwk%2BC89WEQs06iZ7GBhK44Dkrws6Co3ubIVjDhbKDkwrYHRNtulnGguYkKxoD25ur7dKtNWPD6UUgrDcSU4iCvjgrkNVLSixP3ygOo1d8nmmqnHPO4tKAjmSLUklGPSEoCSC9vITdqLZzAHBqsjPyoQnDsDjHTLuO9MsJcQ4xLaMK8hdOWFG1jRe1hyAop%2F6EdwLM%2FMYdmpzwIaz2Q2Ffs4yYp6%2FXS9ocFXOxCFNkexijMqzb5PIPX%2BCactLmFS2Yj4Mem7esdxAnCcFmUc%2BXxKra7fNE92tfTwqLtKPCJniQsK4EzSmKanl1K6i4G2sgF9lChtTmev%2FmbhoL%2FoN%2BAeRNR697OGYBWJ6Rv8S5buse44F8cu1y%2F3dD3clAynheabLXYUy1W%2FGsyoHiapjNtkpAKzL%2BmKqwOi8BbTHOSwydDgRG%2FeDS3rCk0mBQsIXoqE8LqlXHiFkX9W0uXdGZeK46gRtB78OR5lbMQhRnWbcBQrSdeNU2MA%2FGPledzu3TcKaCQJGfAcgl2skIpTOZ6XZDPehTO95dveW9VVEWxVrXhz43CqHty7B5FTgQP4w9UOMB6Hy5h%2BF0pEGUsAi3pH2PTCjnvK1BjqwAWtvscqoH%2BtVSWqY0SNVBMDqvUeH7qAmkUrT8PgslDco%2FmndmOICPT%2FkL1ETWyPWA1D1FbcWdlRBhGfxXPA%2F7j3A2%2F%2FWPUWIwvbFsrGGjoj%2FFXWlPzXBWMSKj7FbBiTtPh81pjmlWDHl5tXQJdhdGEkatqVJsLSVIP0cPRIdVdwuR9Frq4W%2BTnIOaXC4b%2FEcGSSqZDRl2qR828ZMfxYUrf7P49nZ88jfD5f%2Fr6dqUzYf&X-Amz-Algorithm=AWS4-HMAC-SHA256&X-Amz-Date=20240814T114439Z&X-Amz-SignedHeaders=host&X-Amz-Expires=300&X-Amz-Credential=ASIAQ3PHCVTYXB3USKDM%2F20240814%2Fus-east-1%2Fs3%2Faws4_request&X-Amz-Signature=f6d9b1db98d7792be61e74aa1ee3973c5285b409aaf93879560e3f9b6d8dedbc&hash=9bf3aa592c033e8b873c6efbca7cc3611bc74bf036c4dab97183aa0510645e3d&host=68042c943591013ac2b2430a89b270f6af2c76d8dfd086a07176afe7c76c2c61&pii=S0026271423001774&tid=spdf-dec51019-b97c-448b-91b2-3f775fbae62d&sid=4b631c896382a7444958f9036467c86d5aabgxrqb&type=client&tsoh=d3d3LnNjaWVuY2VkaXJlY3QuY29t&ua=1e055a0351530c570159&rr=8b30b1b7f8f55b26&cc=de
Quelle:		In: Microelectronics Reliability. - Elsevier BV. - 150. 2023, 115077. - Special issue of 34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2023
Freie Schlagwörter (Englisch):		Double side cooled module , Temperature calibration , Power cycling , Silicon carbide MOSFETs