Ergebnis der Datenbankabfrage
Nr. | Titel | Autor | Jahr |
---|---|---|---|
1 | Influence of an in situ-deposited intermediate layer inside GaN and AlGaN layers on SiC substrates | Engl, K.* et al. | 2006 |
2 | Long range strain and electrical potential induced by single edge dislocations in GaN | Gmeinwieser, N.* et al. | 2006 |
3 | Microscopic analysis of optical gain in InGaN / GaN quantum wells | Witzigmann, B.* et al. | 2006 |
4 | Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates | Gmeinwieser, N.* et al. | 2004 |
Anzahl der Ergebnisseiten: | 1 |
Anzahl der Dokumente: | 4 |