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Nr.	Titel	Autor	Jahr
1	A Novel Test Method for Bipolar Degradation under Short Dead Times	Herrmann, Clemens et al.	2025
2	Dead Time Dependency of Bipolar Degradation in SiC MOSFETs	Herrmann, Clemens et al.	2025
3	Dynamic Characterization and Robustness of SiC MOSFETs Based on SmartSiCTM Engineered Substrates	Alaluss, Mohamed* et al.	2025
4	Physics-Based Reliability Analysis of Power Modules at Substrate and Component Level	Mathew, Anu et al.	2025
5	Plasma Behavior of SiC MOSFETs with Engineered Substrates During Reverse Recovery	Alaluss, Mohamed et al.	2025
6	Surge Current Operation of Power GaN HEMTs with p-GaN Gate Under Positive Gate Voltage	Goller, Maximilian* et al.	2025
7	Threshold voltage hysteresis investigation of SiC MOSFETs with different structures under various measurement conditions	Xie, Dong* et al.	2025
8	3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Class	Alaluss, Mohamed* et al.	2024
9	Active Short-Circuit Investigation of SiC MOSFETs	Alaluss, Mohamed* et al.	2024
10	Digital Twin-Based Lifetime Estimation of SiC Power Modules	Mathew, Anu* et al.	2024
11	Energy Balancing in Paralleled SiC MOSFETs During an Avalanche Event	Herrmann, Clemens* et al.	2024
12	Influence of Transfer Molding on the Reliability of DCM SiC Power Modules	Rudzki, Jacek* et al.	2024
13	Avalanche Robustness of SiC MOSFETs in Parallel Connections	Herrmann, Clemens et al.	2023
14	Surge-Current capability of the different voltage class IGBTs	Mysore, Madhu Lakshman et al.	2023
15	Investigation of the Short Circuit Type II Safe Operating Area of IGBTs	Mysore, Madhu Lakshman et al.	2022
16	Intelligenter Werkstückträger mit Inertialsensorik zum Überwachen und Optimieren von Fertigungsprozessen	Forke, Roman et al.	2019

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Anzahl der Dokumente:	16