Eintrag in der Universitätsbibliographie der TU Chemnitz
Basler, Thomas ;
Hürner, Andreas ;
Leendertz, Caspar ;
Peters, Dethard
Infineon Technologies AG
Failure Structure in a Semiconductor Device
Kurzfassung in englisch
A semiconductor device is provided. In an embodiment, the semiconductor device comprises a control region, a first power region, a second power region, an isolation region and/or a short circuit structure. The control region comprises a control terminal. The first power region comprises a first power terminal. The second power region comprises a second power terminal. The isolation region is between the control region and the first power region. The short circuit structure extends from the first power region, through the isolation region, to the control region. The short circuit structure is configured to form a low-resistive connection between the control region and the first power region during a failure state of the semiconductor device.
| Universität: | Technische Universität Chemnitz | |
| Institut: | Professur Leistungselektronik | |
| Dokumentart: | Patent (Offenlegungsschrift, Patentschrift, Gebrauchsmusterschrift) | |
| Veröffentlichungsnummer: | US2021159172A1 | |
| Veröffentlichungsdatum | 27.05.2021 | |
| Internationale Patentklassifikation | H01L 23/525 |
