Eintrag in der Universitätsbibliographie der TU Chemnitz
Bhojani, Riteshkumar ; Niedernostheide, Franz-Josef ; Schulze, Hans-Joachim ; Lutz, Josef ; Baburske, Roman
Transistor Device with High Current Robustness
Kurzfassung in englisch
A transistor device includes a first emitter region of a first doping type, a second emitter region of a second doping type, a body of the second doping type, a drift region of the first doping type, a field-stop region of the first doping type, at least one boost structure, and a gate electrode. The boost structure is arranged between the field-stop region and the second emitter region. The at least one boost structure includes a base region of the first doping type and at least one auxiliary emitter region of the second doping type separated from the second emitter region by the base region. An overall dopant dose in the drift region and the field-stop region in a current flow direction of the transistor device is higher than a breakthrough charge of a semiconductor material of the drift region and the field-stop region.
| Universität: | Technische Universität Chemnitz | |
| Institut: | Professur Leistungselektronik | |
| Dokumentart: | Patent (Offenlegungsschrift, Patentschrift, Gebrauchsmusterschrift) | |
| Veröffentlichungsnummer: | US020180061971A1 | |
| Veröffentlichungsdatum | 1.3.2018 | |
| Internationale Patentklassifikation | H01L 29/739 |
