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Eintrag in der Universitätsbibliographie der TU Chemnitz


Lutz, Josef ; Schulze, Hans-Joachim
Infineon Technolgies Austria

Semiconductor component with improved robustness


Kurzfassung in englisch

One aspect is a semiconductor component including a terminal zone; a drift zone of a first conduction type, which is doped more weakly than the terminal zone; a component junction between the drift zone and a further component zone; and a charge carrier compensation zone of the first conduction type, which is arranged between the drift zone and the terminal zone and whose doping concentration is lower than that of the terminal zone, and whose doping concentration increases at least in sections in the direction of the terminal zone from a minimum doping concentration to a maximum doping concentration, the minimum doping concentration being more than 1016 cm−3.

Universität: Technische Universität Chemnitz
Institut: Professur Leistungselektronik
Dokumentart: Patent (Offenlegungsschrift, Patentschrift, Gebrauchsmusterschrift)
Veröffentlichungsnummer: US000008354709B2
Veröffentlichungsdatum 15.01.2013
Internationale Patentklassifikation H01L 29/06

 

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