Eintrag in der Universitätsbibliographie der TU Chemnitz
Lutz, Josef ;
Schulze, Hans-Joachim
Infineon Technolgies Austria
Semiconductor component with improved robustness
Kurzfassung in englisch
One aspect is a semiconductor component including a terminal zone; a drift zone of a first conduction type, which is doped more weakly than the terminal zone; a component junction between the drift zone and a further component zone; and a charge carrier compensation zone of the first conduction type, which is arranged between the drift zone and the terminal zone and whose doping concentration is lower than that of the terminal zone, and whose doping concentration increases at least in sections in the direction of the terminal zone from a minimum doping concentration to a maximum doping concentration, the minimum doping concentration being more than 1016 cm−3.
Universität: | Technische Universität Chemnitz | |
Institut: | Professur Leistungselektronik | |
Dokumentart: | Patent (Offenlegungsschrift, Patentschrift, Gebrauchsmusterschrift) | |
Veröffentlichungsnummer: | US000008354709B2 | |
Veröffentlichungsdatum | 15.01.2013 | |
Internationale Patentklassifikation | H01L 29/06 |