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Nr. Titel Autor Jahr
1 Dynamic Characterization and Robustness of SiC MOSFETs Based on SmartSiCTM Engineered Substrates Alaluss, Mohamed* et al. 2025
2 Influencing Factors on the Dynamic VSD Behaviour of different SiC-MOSFET Technologies used for Temperature Read-Out via VSD(T)-Method during the Power Cycling Test Heimler, Patrick* et al. 2025
3 Investigation of Overcurrent Turn-Off Robustness of 1200 V SiC MOSFETs Mysore, Madhu Lakshman* et al. 2025
4 Plasma Behavior of SiC MOSFETs with Engineered Substrates During Reverse Recovery Alaluss, Mohamed et al. 2025
5 Surge Current Operation of Power GaN HEMTs with p-GaN Gate Under Positive Gate Voltage Goller, Maximilian* et al. 2025
6 Understanding Snap-Off Phenomenon during Reverse Recovery in SiC MOSFET Body Diodes Maitra, Abhishek* et al. 2025
7 Investigation of the IGBT’s and Diode’s Ruggedness Under Short-Circuit Type III Conditions Well Beyond the SOA Mysore, Madhu Lakshman* et al. 2023
8 Study of Different Parameters Influencing the IGBT and Diode Robustness Under Short-Circuit Type III Conditions Mysore, Madhu Lakshman* et al. 2023
9 Surge-Current capability of the different voltage class IGBTs Mysore, Madhu Lakshman et al. 2023
10 Investigation of the Short Circuit Type II Safe Operating Area of IGBTs Mysore, Madhu Lakshman et al. 2022
11 Aluminium modification as indicator for current filaments under repetitive short-circuit in 650 V IGBTs Mysore, Madhu Lakshman et al. 2021
12 Study of 6.5 kV injection enhanced floating emitter (IEFE) IGBT switching behavior and its improved short-circuit robustness Mysore, Madhu Lakshman et al. 2021
13 Current filament behavior in IGBTs of different voltage classes investigated by measurements and simulations Bhojani, Riteshkumar et al. 2020
14 Al modification as indicator of current filaments in IGBTs under repetitive SC operation Mysore, Madhu Lakshman et al. 2019
15 Investigation of repetitive short-circuit operation of 1200 V IGBTs in the IC-VCEphase space Bhojani, Riteshkumar* et al. 2019
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