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Nr. Titel Autor Jahr
1 Decoupled Degradation Monitoring of IGBT Modules Based on Temperature-Quantified Indicators Ge, Xinglai et al. 2026
2 Impact of the Negative Gate Bias on Short-Circuit Robustness of SiC MOSFETs with Measurements and Simulations Mysore, Madhu Lakshman* et al. 2026
3 Influencing Factors on the Dynamic VSD Behaviour of Different SiC-MOSFET Technologies used for Temperature Read-Out via VSD(T)-Method during the Power Cycling Test at Different Operating Modes Heimler, Patrick* et al. 2026
4 On the Reverse Recovery of SiC MOSFET Inverse Diodes Lutz, Josef* et al. 2026
5 SiC MOSFETs in Parallel Switching for MW Inverter Applications Ye, Yijun et al. 2026
6 Understanding the Influence of Different Parameters on the Dynamic VSD Behaviour of SiC MOSFETs during Power Cycling Test Mysore, Madhu Lakshman* et al. 2026
7 Advanced power cycling test strategies on discrete SiC MOSFETs in different operating modes and the impact on lifetime Hein, Lukas* et al. 2025
8 Factors Influencing the Power Cycling Lifetime of Paralleled IGBT Chips Abuogo, James et al. 2025
9 Influence of Low Temperature Swings and Short Heating Times on the Power Cycling Capability of IGBTs in Discrete Housings Heimler, Patrick* et al. 2025
10 Influence of Switching Loss Magnitude on Lifetime During a Switch-Mode Power Cycling Test of SiC MOSFETs Abuogo, James* et al. 2025
11 Influencing Factors on the Dynamic VSD Behaviour of different SiC-MOSFET Technologies used for Temperature Read-Out via VSD(T)-Method during the Power Cycling Test Heimler, Patrick* et al. 2025
12 Influencing Parameters on the Dynamic On-State Resistance RDS,on in GaN HEMTs and its Recovery Behavior Goller, Maximilian* et al. 2025
13 Investigation of Overcurrent Turn-Off Robustness of 1200 V SiC MOSFETs Mysore, Madhu Lakshman* et al. 2025
14 Investigation on the High Temperature Behaviour of p-GaN HEMTs by Different Temperature Sensitive Electrical Parameters Hein, Lukas* et al. 2025
15 Neue Möglichkeiten zum Kampf gegen Krebs – Aber blamables Gutachterwesen Bittel, Günther et al. 2025
16 Power Cycling Reliability of Paralleled IGBT Chips Heated with Conduction and Switching Losses Abuogo, James* et al. 2025
17 Reliability of discrete SiC MOSFETs under severe temperature-shock and power cycling tests Heimler, Patrick* et al. 2025
18 Reliability Testing of SiC MOSFETs in Different Power Cycling Operating Modes - Focusing on the Challenges of Body Diode Testing Hein, Lukas* et al. 2025
19 Surge Current Operation of Power GaN HEMTs with p-GaN Gate Under Positive Gate Voltage Goller, Maximilian* et al. 2025
20 The impact of mold compound on power cycling capability of SiC MOSFETs in double sided cooled modules Lentzsch, Tobias* et al. 2025
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Anzahl der Dokumente: 367

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