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Nr. Titel Autor Jahr
1 Semiconductor Package or a Printed Circuit Board, Both Modified to One or More of Reduce, Inverse or Utilize Magnetic Coupling Caused by the Load Current of a Semiconductor Transistor Liu, Xing et al. 2024
2 Channel Potential Modification induced Displacement Current during the Trench-Gate IGBT Switching Liu, Xing* et al. 2023
3 IGBT and Free-Wheeling Diode Behavior during the Short Circuit Type III with varied Operation Conditions Liu, Xing* et al. 2023
4 Investigation of the Gate Voltage Overshoot of IGBTs Under Short Circuit Type II Condition Liu, Xing* et al. 2023
5 SiC MOSFET threshold voltage stability during power cycling testing and the impact on the result interpretation Schwabe, Christian* et al. 2023
6 Study of Power Cycling Tests Superimposed with Passive Thermal Cycles on IGBT Modules Otto, Alexander et al. 2023
7 The Impact of the Dead-Time on the Reverse Recovery Behavior of SiC-MOSFET Body Diodes Liu, Xing* et al. 2023
8 Impact of Degradation Mechanisms in Gate Stress Tests on the Hard-Switching Behavior of 1.2 kV SiC Power MOSFETs Boldyrjew-Mast, Roman* et al. 2022
9 Ouvercurrent turn-off robustness and stability of switching behaviour of SiC MOSFET body diodes Palanisamy, Shanmuganathan et al. 2022
10 Short Circuit Type II and III Behavior of 1.2 kV Power SiC-MOSFETs Liu, Xing* et al. 2022
11 Study on the IGBT Short Circuit Type II Behavior Considering the Plasma Effect Liu, Xing* et al. 2022
12 Temperature Distribution of an IGBT Chip during Repetitive SwitchingEvents under Consideration of Front-Side Ageing Bäumler, Christian et al. 2022
13 Fast Short Circuit Type I Detection Method based on VGE-Monitoring Herrmann, Clemens* et al. 2021
14 Influence of Lateral Temperature Gradients on the Failure Modes at Power Cycling Liu, Xing et al. 2021
15 Influence of power cycling ageing on the current and voltage transitions during hard switching of IGBT devices Deng, Erping* et al. 2021
16 Influence of Power Cycling Aging to IGBT Hard Switching Behavior Liu, Xing* et al. 2021
17 Influence of the gate resistance on the short circuit type II & III behavior of IGBT modules and protection Liu, Xing* et al. 2020
18 The Influence of the gate driver and common source inductance on the short circuit behavior of IGBT modules and protection Liu, Xing* et al. 2020
19 A Clamping Circuit for Short Circuit Ruggedness Improvement of Discrete IGBT Devices based on the di/dt Feedback of Emitter Stray Inductance Liu, Xing et al. 2019
20 Fully Integrated Organic Nanocrystal Diode as High Performance Room Temperature NO2 Sensor Jalil, Abdur Rehman et al. 2016
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