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Nr. Titel Autor Jahr
1 3-D Printable Living Hydrogels as Portable Bio-energy Devices Wang, Xinyu* et al. 2025
2 3-D Printable Living Hydrogels as Portable Bio-energy Devices (Adv. Mater. 18/2025) : Inside Back Cover Wang, Xinyu et al. 2025
3 External and Internal Factors Influencing the Short Circuit of IGBTs and SiC-MOSFETs Liu, Xing 2025
4 Influence of the Gate Switching Instability Induced Threshold Voltage Drift on the Hard Switching Behavior of 1.2 kV SiC MOSFETs Boldyrjew-Mast, Roman* et al. 2025
5 Fatigue Crack Networks in Die-Attach Layers of IGBT Modules Under a Power Cycling Test Liu, Shenyi* et al. 2024
6 Semiconductor Package or a Printed Circuit Board, Both Modified to One or More of Reduce, Inverse or Utilize Magnetic Coupling Caused by the Load Current of a Semiconductor Transistor Liu, Xing et al. 2024
7 Study of the Bias Driven Threshold Voltage Drift of 1.2 kV SiC MOSFETs in Power Cycling and High Temperature Gate Bias Tests Boldyrjew-Mast, Roman* et al. 2024
8 Channel Potential Modification induced Displacement Current during the Trench-Gate IGBT Switching Liu, Xing* et al. 2023
9 IGBT and Free-Wheeling Diode Behavior during the Short Circuit Type III with varied Operation Conditions Liu, Xing* et al. 2023
10 Investigation of the Gate Voltage Overshoot of IGBTs Under Short Circuit Type II Condition Liu, Xing* et al. 2023
11 SiC MOSFET threshold voltage stability during power cycling testing and the impact on the result interpretation Schwabe, Christian* et al. 2023
12 Study of Power Cycling Tests Superimposed with Passive Thermal Cycles on IGBT Modules Otto, Alexander et al. 2023
13 The Impact of the Dead-Time on the Reverse Recovery Behavior of SiC-MOSFET Body Diodes Liu, Xing* et al. 2023
14 Impact of Degradation Mechanisms in Gate Stress Tests on the Hard-Switching Behavior of 1.2 kV SiC Power MOSFETs Boldyrjew-Mast, Roman* et al. 2022
15 Ouvercurrent turn-off robustness and stability of switching behaviour of SiC MOSFET body diodes Palanisamy, Shanmuganathan et al. 2022
16 Short Circuit Type II and III Behavior of 1.2 kV Power SiC-MOSFETs Liu, Xing* et al. 2022
17 Study on the IGBT Short Circuit Type II Behavior Considering the Plasma Effect Liu, Xing* et al. 2022
18 Temperature Distribution of an IGBT Chip during Repetitive SwitchingEvents under Consideration of Front-Side Ageing Bäumler, Christian et al. 2022
19 Fast Short Circuit Type I Detection Method based on VGE-Monitoring Herrmann, Clemens* et al. 2021
20 Influence of Lateral Temperature Gradients on the Failure Modes at Power Cycling Liu, Xing et al. 2021
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