Ergebnis der Datenbankabfrage
Nr. | Titel | Autor | Jahr |
---|---|---|---|
1 | Influence of thermal interface material using discrete Si-IGBTs and consideration of power cycling conditions | Heimler, Patrick* et al. | 2023 |
2 | Investigation of the bipolar degradation of SiC MOSFET body diodes and the influence of current density | Palanisamy, Shanmuganathan* et al. | 2021 |
3 | Impact of load pulse duration on power cycling capability of SiC devices | Salmen, Paul* et al. | 2020 |
4 | Power cycling results of high power IGBT modules close to 50 Hz heating process | Zeng, Guang et al. | 2019 |
Anzahl der Ergebnisseiten: | 1 |
Anzahl der Dokumente: | 4 |