Ergebnis der Datenbankabfrage
Nr. | Titel | Autor | Jahr |
---|---|---|---|
1 | Impact of Degradation Mechanisms in Gate Stress Tests on the Hard-Switching Behavior of 1.2 kV SiC Power MOSFETs | Boldyrjew-Mast, Roman* et al. | 2022 |
2 | Gate Oxide Reliability of 1.2 kV and 6.5 kV SiC MOSFETs under Stair-Shaped Increase of Positive and Negative Gate Bias | Boldyrjew-Mast, Roman* et al. | 2021 |
3 | Influence of different test strategies on the power cycling test results of 6.5 kV SiC MOSFETs | Gerlach, Martina et al. | 2021 |
4 | Reliability of GaN GIT Devices in Power Cycling Tests with RDS(on)(T) and VGS(T) for Junction Temperature Calculation | Boldyrjew-Mast, Roman* et al. | 2020 |
5 | Thermomechanical behaviour of inverse diode in SiC MOSFETs under surge current stress | Palanisamy, Shanmuganathan et al. | 2020 |
6 | Reliability test results of PCB soldered GaN GIT devices | Boldyrjew-Mast, Roman* et al. | 2019 |
Anzahl der Ergebnisseiten: | 1 |
Anzahl der Dokumente: | 6 |