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Nr.	Titel	Autor	Jahr
1	Reliability of Wide Bandgap Semiconductors for Automotive Applications	Kaminski, Nando* et al.	2026
2	Influence of the Gate Switching Instability Induced Threshold Voltage Drift on the Hard Switching Behavior of 1.2 kV SiC MOSFETs	Boldyrjew-Mast, Roman* et al.	2025
3	Threshold voltage hysteresis investigation of SiC MOSFETs with different structures under various measurement conditions	Xie, Dong* et al.	2025
4	Gate Oxide Reliability of Current Generation 1.2 kV SiC MOSFETs under Step-Wise Increased Gate Voltage	Boldyrjew-Mast, Roman* et al.	2024
5	Mission-Profile-Related Evaluation of the Threshold-Voltage Stability of SiC MOSFETs	Oliveira, Joao* et al.	2024
6	Study of the Bias Driven Threshold Voltage Drift of 1.2 kV SiC MOSFETs in Power Cycling and High Temperature Gate Bias Tests	Boldyrjew-Mast, Roman* et al.	2024
7	Impact of Degradation Mechanisms in Gate Stress Tests on the Hard-Switching Behavior of 1.2 kV SiC Power MOSFETs	Boldyrjew-Mast, Roman* et al.	2022
8	Gate Oxide Reliability of 1.2 kV and 6.5 kV SiC MOSFETs under Stair-Shaped Increase of Positive and Negative Gate Bias	Boldyrjew-Mast, Roman* et al.	2021
9	Influence of different test strategies on the power cycling test results of 6.5 kV SiC MOSFETs	Gerlach, Martina et al.	2021
10	Reliability of GaN GIT Devices in Power Cycling Tests with RDS(on)(T) and VGS(T) for Junction Temperature Calculation	Boldyrjew-Mast, Roman* et al.	2020
11	Thermomechanical behaviour of inverse diode in SiC MOSFETs under surge current stress	Palanisamy, Shanmuganathan et al.	2020
12	Reliability test results of PCB soldered GaN GIT devices	Boldyrjew-Mast, Roman* et al.	2019

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Anzahl der Ergebnisseiten:	1
Anzahl der Dokumente:	12