Eintrag in der Universitätsbibliographie der TU Chemnitz
Baburske, Roman ; Lutz, Josef ; Schulze, Hans-Joachim ; Siemieniec, Ralf
A bipolar semiconductor component with a fully depletable channel zone
Kurzfassung in englisch
A bipolar semiconductor component, in particular a diode, comprising an anode structure which controls its emitter efficiency in a manner dependent on the current density in such a way that the emitter efficiency is low at small current densities and sufficiently high at large current densities, and an optional cathode structure, which can inject additional holes during commutation, and production methods therefor.
| Universität: | Technische Universität Chemnitz | |
| Institut: | Professur Leistungselektronik | |
| Dokumentart: | Patent (Offenlegungsschrift, Patentschrift, Gebrauchsmusterschrift) | |
| Veröffentlichungsnummer: | US020130320500A1 | |
| Veröffentlichungsdatum | 05.12.2013 | |
| Internationale Patentklassifikation | H01L 29/73 |
