Eintrag in der Universitätsbibliographie der TU Chemnitz
Barthelmeß, Rainer ;
Basler, Thomas ;
Kellner-Werdehausen, Uwe ;
Lutz, Josef ;
Schulze, Hans-Joachim
Infineon Technologies Bipolar GmbH
SEMICONDUCTOR COMPONENT WITH OPTIMIZED EDGE TERMINATION
Kurzfassung in englisch
A semiconductor component comprising: - a semiconductor body (21) having a first side (22), a second side (23) and an edge (24), - an inner zone (27) having a basic doping of a first conduction type, - a first semiconductor zone (28, 61), which is arranged between the first side (22) and the inner zone (27) and is of the first conduction type and having a doping concentration higher than that of the inner zone (27), - a second semiconductor zone (29), which is arranged between the second side (23) and the inner zone (27) and is of a second conduction type, which is complementary to the first conduction type, having a doping concentration of higher than that of the inner zone (27), - at least one first edge chamfer extending at a first angle (30) with respect to the extension plane of the transition from the second semiconductor zone (29) to the inner zone (27) at least along the edge (24) of the second semiconductor zone (29) and the inner zone (27), wherein at least one buried semiconductor zone (41, 51, 81) of the second conduction type having a doping concentration higher than that of the inner zone (27) is provided between the first semiconductor zone (28, 61) and the inner zone (27) and extends substantially parallel to the first semiconductor zone (28, 61).
| Universität: | Technische Universität Chemnitz | |
| Institut: | Professur Leistungselektronik | |
| Dokumentart: | Patent (Offenlegungsschrift, Patentschrift, Gebrauchsmusterschrift) | |
| Veröffentlichungsnummer: | WO002013079235A1 | |
| Veröffentlichungsdatum | 6.6.2013 | |
| Internationale Patentklassifikation | H01L 29/06, H01L 29/861 | |
| Nachanmeldungen in anderen Staaten | US020140327114A1 |
