Eintrag in der Universitätsbibliographie der TU Chemnitz
Baburske, Roman ;
Lutz, Josef ;
Schulze, Hans-Joachim ;
Siemieniec, Ralf
Infineon Technologies Austria
SEMICONDUCTOR DIODE RESISTIVE TO SURGE CURRENT WITH SOFT RECOVERY BEHAVIOR, AND METHOD OF MANUFACTURING THE SAME
Kurzfassung in englisch
PROBLEM TO BE SOLVED To provide a semiconductor device resistive to a surge current with soft recovery behavior, and to provide a method of manufacturing the same.SOLUTION: A bipolar-semiconductor constituent element 100, especially a diode, includes an anode configuration controlling emitter efficiency through a method depending on a current density so as to get lower at a current density with a small emitter efficiency and get higher at a current density with a large emitter efficiency, and an option cathode configuration capable of injecting an additional hole during commutation. The method is also disclosed for manufacturing the same.
| Universität: | Technische Universität Chemnitz | |
| Institut: | Professur Leistungselektronik | |
| Dokumentart: | Patent (Offenlegungsschrift, Patentschrift, Gebrauchsmusterschrift) | |
| Veröffentlichungsnummer: | JP002011086931A | |
| Veröffentlichungsdatum | 28.04.2011 | |
| Internationale Patentklassifikation | H01L 29/861 |
